Technical parameters/dissipated power: 6 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 1260pF @15V(Vds)
Technical parameters/rated power (Max): 6 W
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerTDFN-8
External dimensions/height: 1.05 mm
External dimensions/packaging: PowerTDFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Supply in progress
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD86330Q3D
|
TI | 功能相似 | LDFN-8 |
同步降压 NexFET™ 电源块 MOSFET 对
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CSD87330Q3D
|
TI | 功能相似 | LSON-CLIP-8 |
30V 同步降压 NexFET™ 电源块
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||
CSD87334Q3DT
|
TI | 完全替代 | PowerTDFN-8 |
CSD87334Q3DT 编带
|
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