Chip AI consultant
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0016 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 1.9 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 200A
Technical parameters/rise time: 3 ns
Technical parameters/Input capacitance (Ciss): 6620pF @30V(Vds)
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 9.25 mm
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Contains Lead
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD18535KTT
|
TI | 功能相似 | TO-263-3 |
60V、N 沟道 NexFET MOSFET™、单路、D2PAK、2mΩ 3-DDPAK/TO-263 -55 to 175
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review