Chip AI consultant
Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 2.3 mΩ |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 300 W |
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Technical parameters/threshold voltage: | 1.9 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60 V |
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Technical parameters/Continuous drain current (Ids): | 200A |
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Technical parameters/rise time: | 3 ns |
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Technical parameters/Input capacitance (Ciss): | 6620pF @30V(Vds) |
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Technical parameters/descent time: | 3 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 300W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 9.25 mm |
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Dimensions/Height: | 4.7 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Supply in progress |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD19506KTT
|
TI | 类似代替 | TO-263-3 |
80V、N 沟道 NexFET MOSFET™、单路、D2PAK、2.3mΩ 3-DDPAK/TO-263 -55 to 175
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