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Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 3.5 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 83 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 60A
Technical parameters/rise time: 21 ns
Technical parameters/Input capacitance (Ciss): 3640pF @15V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 3.1W (Ta), 83W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: VSONP-8
External dimensions/length: 6 mm
External dimensions/width: 4.9 mm
External dimensions/height: 1 mm
External dimensions/packaging: VSONP-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 155℃ (TJ)
Other/Product Lifecycle: Supply in progress
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD17577Q5A
|
TI | 类似代替 | VSONP-8 |
30V、N 沟道 NexFET MOSFET™、单路、SON5x6、5.8mΩ 8-VSONP -55 to 150
|
||
CSD17581Q5AT
|
TI | 类似代替 | VSONP-8 |
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0029 ohm, 10 V, 1.3 V
|
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