Technical parameters/number of channels: | 1 |
|
Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 3 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 60A |
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Technical parameters/rise time: | 12 ns |
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Technical parameters/Input capacitance (Ciss): | 2310pF @15V(Vds) |
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Technical parameters/descent time: | 2 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3W (Ta), 53W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | VSONP-8 |
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Dimensions/Packaging: | VSONP-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Supply in progress |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD17577Q5AT
|
TI | 类似代替 | VSONP-8 |
TEXAS INSTRUMENTS CSD17577Q5AT 晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0035 ohm, 10 V, 1.4 V
|
||
CSD17581Q5A
|
TI | 类似代替 | VSONP-8 |
CSD17581Q5A 30V N 沟道 NexFET™ MOSFET
|
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