Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1400 mW
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 3.6A
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 156pF @6V(Vds)
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PICOSTAR-3
External dimensions/packaging: PICOSTAR-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Supply in progress
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD13383F4
|
TI | 类似代替 | PICOSTAR-3 |
CSD13383F4 12V N 通道 FemtoFET™ MOSFET
|
||
CSD15380F3
|
TI | 类似代替 | PICOSTAR-3 |
20V、N 沟道 NexFET MOSFET™、单路、LGA 0.6x0.7、1460mΩ 3-PICOSTAR -55 to 150
|
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