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Model CSD13383F4
Description CSD13383F4 12V N 通道 FemtoFET™ MOSFET
Product QR code
Brand: TI
Packaging PICOSTAR-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.55  yuan 0.55yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4881) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

500 mW

 

Technical parameters/drain source voltage (Vds):

12 V

 

Technical parameters/Continuous drain current (Ids):

2.9A

 

Technical parameters/rise time:

122 ns

 

Technical parameters/Input capacitance (Ciss):

291pF @6V(Vds)

 

Technical parameters/rated power (Max):

500 mW

 

Technical parameters/descent time:

290 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

500mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

PICOSTAR-3

 

Dimensions/Length:

1 mm

 

Dimensions/Width:

0.64 mm

 

Dimensions/Height:

0.35 mm

 

Dimensions/Packaging:

PICOSTAR-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Supply in progress

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
CSD17382F4 CSD17382F4 TI 类似代替 PICOSTAR-3
30V、N 沟道 NexFET MOSFET™、单路、LGA 1.0 x 0.6mm、67mΩ 3-PICOSTAR -55 to 150

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