Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 630 mA
Technical parameters/drain source resistance: 510 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 270 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 630 mA
Technical parameters/rise time: 227 ns
Technical parameters/Input capacitance (Ciss): 46pF @20V(Vds)
Technical parameters/rated power (Max): 270 mW
Technical parameters/descent time: 227 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-88-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SC-88-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTJD4401NT2G
|
ON Semiconductor | 类似代替 | SC-88-6 |
小信号20V,双N沟道MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review