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Model NTJD4401NT2G

Description Small signal 20V, dual N-channel MOSFET

Brand: ON Semiconductor

Packaging SC-88-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	20.0 V
Technical parameters/rated current:	775 mA
Technical parameters/drain source resistance:	510 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	270 mW
Technical parameters/Input capacitance:	46.0 pF
Technical parameters/gate charge:	3.00 nC
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Leakage source breakdown voltage:	20.0 V
Technical parameters/breakdown voltage of gate source:	±12.0 V
Technical parameters/Continuous drain current (Ids):	630 mA
Technical parameters/rise time:	227 ns
Technical parameters/Input capacitance (Ciss):	46pF @20V(Vds)
Technical parameters/rated power (Max):	270 mW
Technical parameters/descent time:	506 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	550 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SC-88-6
Dimensions/Packaging:	SC-88-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free