Technical parameters/frequency: 145 MHz
Technical parameters/rated power: 1.35 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 1.35 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP51-16,135
|
NXP | 类似代替 | TO-261-4 |
BCP51-16,135 编带
|
||
|
|
Zetex | 功能相似 | SOT-223 |
BCP5116TA 编带
|
||
DCP51-16-13
|
Diodes | 功能相似 | TO-261-4 |
双极晶体管 - 双极结型晶体管(BJT) 1W -45V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review