Chip AI consultant
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 160 V
Technical parameters/maximum allowable collector current: 0.6A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KST5551MTF
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ON Semiconductor | 功能相似 | SOT-23-3 |
NPN 晶体管，高于 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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UMW | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5551 单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
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MMBT5551
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ST Microelectronics | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5551 单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
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GMR Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5551 单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
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FMS | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5551 单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
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Bourns J.W. Miller | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5551 单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
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GUANGDONG HOTTECH INDUSTRIAL | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5551 单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
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BORN | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5551 单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
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PMBT5550
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Nexperia | 功能相似 | SOT-23 |
NXP PMBT5550 单晶体管 双极, NPN, 140 V, 300 MHz, 250 mW, 300 mA, 60 hFE
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