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Model KST5551MTF

Description ON Semiconductor KST5551MTF , NPN 晶体管, 600 mA, Vce=160 V, HFE:30, 100 MHz, 3引脚 SOT-23封装

Brand: ON Semiconductor

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/dissipated power:	350 mW
Technical parameters/breakdown voltage (collector emitter):	160 V
Technical parameters/minimum current amplification factor (hFE):	80 @10mA, 5V
Technical parameters/rated power (Max):	350 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	350 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	2.9 mm
Dimensions/Width:	1.3 mm
Dimensions/Height:	0.97 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	lead-free
Customs information/ECCN code:	EAR99

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