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Specification parameters
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Technical parameters/rated voltage (DC):

160 V

Technical parameters/rated current:

600 mA

Technical parameters/rated power:

0.225 W

Technical parameters/number of pins:

Technical parameters/polarity:

NPN

Technical parameters/dissipated power:

225 mW

Technical parameters/breakdown voltage (collector emitter):

160 V

Technical parameters/Maximum allowable collector current:

0.6A

Technical parameters/minimum current amplification factor (hFE):

80 @10mA, 5V

Technical parameters/maximum current amplification factor (hFE):

250

Technical parameters/rated power (Max):

225 mW

Technical parameters/DC current gain (hFE):

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

300 mW

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOT-23-3

Dimensions/Length:

2.9 mm

Dimensions/Width:

1.3 mm

Dimensions/Height:

0.94 mm

Dimensions/Packaging:

SOT-23-3

Physical parameters/materials:

Silicon

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Other/Manufacturing Applications:

Industrial, Automotive, Automotive

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Fre

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
MMBT5551	UMW	类似代替	SOT-23-3	高电压晶体管 High Voltage Transistors
MMBT5551	ST Microelectronics	类似代替	SOT-23-3	高电压晶体管 High Voltage Transistors
MMBT5551	GMR Semiconductor	类似代替	SOT-23-3	高电压晶体管 High Voltage Transistors
MMBT5551	FMS	类似代替	SOT-23-3	高电压晶体管 High Voltage Transistors
MMBT5551	Bourns J.W. Miller	类似代替	SOT-23	高电压晶体管 High Voltage Transistors
MMBT5551	GUANGDONG HOTTECH INDUSTRIAL	类似代替	SOT-23-3	高电压晶体管 High Voltage Transistors
MMBT5551	BORN	类似代替	SOT-23	高电压晶体管 High Voltage Transistors
MMBT5551LT3G	ON Semiconductor	类似代替	SOT-23-3	NPN 晶体管，最大 1A，On Semiconductor ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管通用晶体管双 NPN 和 PNP 晶体管功率晶体管高电压晶体管射频双极晶体管低噪声，双匹配和复杂的双极晶体管	PDF
SMMBT5551LT1G	ON Semiconductor	类似代替	SOT-23-3	NPN 晶体管，最大 1A，On Semiconductor ### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管通用晶体管双 NPN 和 PNP 晶体管功率晶体管高电压晶体管射频双极晶体管低噪声，双匹配和复杂的双极晶体管	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643