Technical parameters/rated voltage (DC): | 160 V |
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Technical parameters/rated current: | 600 mA |
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Technical parameters/rated power: | 225 mW |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 225 mW |
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Technical parameters/breakdown voltage (collector emitter): | 160 V |
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Technical parameters/Maximum allowable collector current: | 0.6A |
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Technical parameters/minimum current amplification factor (hFE): | 80 @10mA, 5V |
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Technical parameters/rated power (Max): | 225 mW |
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Technical parameters/DC current gain (hFE): | 80 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 225 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3.04 mm |
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Dimensions/Width: | 2.64 mm |
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Dimensions/Height: | 1.11 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
UMW | 类似代替 | SOT-23-3 |
高电压晶体管 High Voltage Transistors
|
||
MMBT5551
|
ST Microelectronics | 类似代替 | SOT-23-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
GMR Semiconductor | 类似代替 | SOT-23-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
FMS | 类似代替 | SOT-23-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
Bourns J.W. Miller | 类似代替 | SOT-23 |
高电压晶体管 High Voltage Transistors
|
||
|
|
GUANGDONG HOTTECH INDUSTRIAL | 类似代替 | SOT-23-3 |
高电压晶体管 High Voltage Transistors
|
||
|
|
BORN | 类似代替 | SOT-23 |
高电压晶体管 High Voltage Transistors
|
||
MMBT5551LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBT5551LT1G 单晶体管 双极, 通用, NPN, 160 V, 225 mW, 600 mA, 80 hFE
|
||
SMMBT5551LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
NPN 晶体管,最大 1A,On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。 ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管
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