Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 400 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.50 W
Technical parameters/input capacitance: 400 pF
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 400 mA
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 | SOT-223 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
|
||
BSP299
|
Infineon | 功能相似 | SOT-223 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
|
||
BSP299H6327
|
Infineon | 功能相似 |
500V,4000mΩ,0.4A,N沟道小信号MOSFET
|
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