Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 4 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.8 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 400 mA
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 300pF @25V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 1.8 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-223
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Onboard charger, Automotive, Power Management, Communication&Networking, Automotive, Consumer Electronics, Power Management, Portable Devices, Consumer Electronics, Portable Equipment, Communications&Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 | SOT-223 |
Infineon SIPMOS® N 通道 MOSFET
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BSP299
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Infineon | 功能相似 | SOT-223 |
Infineon SIPMOS® N 通道 MOSFET
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BSP299H6327
|
Infineon | 功能相似 |
500V,4000mΩ,0.4A,N沟道小信号MOSFET
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|||
BSP299L6327
|
Infineon | 功能相似 | SOT-223 |
MOSFET, N, LOGIC, REEL 1K
|
||
|
|
Infineon | 类似代替 | SOT-223 |
N-channel Sipmos Small-signal Transistor
|
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