Technical parameters/number of circuits: 1
Technical parameters/conversion rate: 1.80 kV/μs
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP
External dimensions/length: 9.817 mm
External dimensions/width: 7.62 mm
External dimensions/packaging: DIP
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
National Semiconductor | 完全替代 | SOP |
Wideband, Low Power, Variable Gain Amplifier 8-SOIC -40℃ to 85℃
|
||
LMH6504MAX
|
TI | 完全替代 | SOIC-8 |
Wideband, Low Power, Variable Gain Amplifier 8-SOIC -40℃ to 85℃
|
||
LMH6504MMX
|
TI | 完全替代 | TSSOP-8 |
Wideband, Low Power, Variable Gain Amplifier 8-VSSOP -40℃ to 85℃
|
||
|
|
National Semiconductor | 完全替代 | TSSOP |
IC OPAMP VGA 150MHz 8VSSOP
|
||
LMH6504MMX/NOPB
|
TI | 完全替代 | TSSOP-8 |
IC OPAMP VGA 150MHz 8VSSOP
|
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