Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.2W (Ta), 42W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 14A
Technical parameters/rise time: 8.9 ns
Technical parameters/Input capacitance (Ciss): 1430pF @15V(Vds)
Technical parameters/descent time: 5.3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 2.2W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/packaging: Direct-FET
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF8327STRPBF
|
Infineon | 类似代替 | Direct-FET |
场效应管(MOSFET) IRF8327STRPBF DirectFET
|
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