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Model IRF8327STRPBF

Description 场效应管(MOSFET) IRF8327STRPBF DirectFET

Brand: Infineon

Packaging Direct-FET

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	10.9 mΩ
Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	42 W
Technical parameters/Input capacitance:	1430 pF
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Leakage source breakdown voltage:	30 V
Technical parameters/Continuous drain current (Ids):	14A
Technical parameters/rise time:	8.9 ns
Technical parameters/Input capacitance (Ciss):	1430pF @15V(Vds)
Technical parameters/descent time:	5.3 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Technical parameters/dissipated power (Max):	2.2W (Ta), 42W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	Direct-FET
Dimensions/Length:	3 mm
Dimensions/Width:	3 mm
Dimensions/Height:	1.11 mm
Dimensions/Packaging:	Direct-FET
Physical parameters/operating temperature:	-40℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Isolated Secondary Side SyncRec MOSFETs, Isolated Primary Side MOSFETs, Point of Load ControlFET, Battery Protection, Load Switch Low Side, Load Switch High Side
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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IRF8327STR1PBF	Infineon	类似代替	Direct-FET	Direct-FET N-CH 30V 14A	PDF