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Technical parameters/digital logic level: CMOS
Technical parameters/power supply voltage (DC): 15.0 V, 18.0 V (max)
Technical parameters/output current: 6.8 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/number of pins: 24
Technical parameters/digits: 4
Technical parameters/polarity: Non-Inverting
Technical Parameters/Voltage Wave Node: 5.00 V, 10.0 V, 15.0 V
Technical parameters/Static current: 40.0 nA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/power supply voltage: 3V ~ 18V
Technical parameters/power supply voltage (Max): 18 V
Technical parameters/power supply voltage (Min): 3 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 24
Encapsulation parameters/Encapsulation: DIP-24
External dimensions/height: 4.57 mm
External dimensions/packaging: DIP-24
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Communication and Networking, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2018/06/27
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HEF4508BD
|
NXP | 功能相似 | DIP |
双4位锁存器 Dual 4-bit latch
|
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