Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 11.0 A
Technical parameters/rated power: 180 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.6 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 180 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 2700pF @25V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 11.0 A
Technical parameters/rise time: 37 ns
Technical parameters/Input capacitance (Ciss): 2700pF @25V(Vds)
Technical parameters/descent time: 36 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 180 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/length: 15.87 mm
External dimensions/width: 5.31 mm
External dimensions/height: 20.7 mm
External dimensions/packaging: TO-247
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFPC40PBF
|
VISHAY | 类似代替 | TO-247-3 |
N 通道 MOSFET,600V 至 1000V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRFPC50
|
VISHAY | 完全替代 | TO-247 |
MOSFET N-CH 600V 11A TO-247AC
|
||
IRFPC50
|
International Rectifier | 完全替代 | TO-247 |
MOSFET N-CH 600V 11A TO-247AC
|
||
IRFPC50
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 600V 11A TO-247AC
|
|||
IRFPC50LCPBF
|
Vishay Semiconductor | 功能相似 | TO-247 |
MOSFET N-CH 600V 11A TO-247AC
|
||
IXFH26N60Q
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH26N60Q 功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V
|
||
STW10NK60Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW10NK60Z 功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
|
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