Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -600 mA
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMST2907A-7-F
|
Multicomp | 完全替代 | SOT-323 |
DIODES INC. MMST2907A-7-F 单晶体管 双极, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
|
||
MMST2907A-7-F
|
Diodes Zetex | 完全替代 | SOT-323 |
DIODES INC. MMST2907A-7-F 单晶体管 双极, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
|
||
PMST2907A,115
|
Nexperia | 类似代替 | SOT-323-3 |
NXP PMST2907A,115 单晶体管 双极, 开关, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
|
||
PMST2907A,115
|
NXP | 类似代替 | SOT-323-3 |
NXP PMST2907A,115 单晶体管 双极, 开关, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
|
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