Technical parameters/rated power: | 0.2 W |
|
Technical parameters/number of pins: | 3 |
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Technical parameters/dissipated power: | 200 mW |
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Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
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Technical parameters/rated power (Max): | 200 mW |
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Technical parameters/DC current gain (hFE): | 100 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-323-3 |
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Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-323-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Industrial, power management, automotive use |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2907AWT1G
|
ON Semiconductor | 功能相似 | SC-70-3 |
ON SEMICONDUCTOR MMBT2907AWT1G 单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 150 mW, -600 mA, 50 hFE
|
||
MMST2907A-7
|
Diodes | 类似代替 | SOT-323-3 |
TRANS PNP 60V 0.6A SC70-3
|
||
MMST2907A-7-F
|
Multicomp | 功能相似 | SOT-323 |
DIODES INC. MMST2907A-7-F 单晶体管 双极, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
|
||
MMST2907A-7-F
|
Diodes Zetex | 功能相似 | SOT-323 |
DIODES INC. MMST2907A-7-F 单晶体管 双极, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
|
||
PMST2907A,115
|
Nexperia | 功能相似 | SOT-323-3 |
NXP PMST2907A,115 单晶体管 双极, 开关, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
|
||
PMST2907A,115
|
NXP | 功能相似 | SOT-323-3 |
NXP PMST2907A,115 单晶体管 双极, 开关, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
|
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