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Model IRLR7807ZTRPBF
Description HEXFET® N Channel power MOSFET maximum 50A, Infineon HEXFET ® Power MOSFETs have various robust single N-channel devices used to provide AC to DC and DC to DC power for audio, consumer electronics, motor control, lighting, and household appliances. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.87  yuan 2.87yuan
5+:
$ 3.8786
25+:
$ 3.5913
50+:
$ 3.3901
100+:
$ 3.3040
500+:
$ 3.2465
2500+:
$ 3.1747
5000+:
$ 3.1459
10000+:
$ 3.1028
Quantity
5+
25+
50+
100+
500+
Price
$3.8786
$3.5913
$3.3901
$3.3040
$3.2465
Price $ 3.8786 $ 3.5913 $ 3.3901 $ 3.3040 $ 3.2465
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3005) Minimum order quantity(5)
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Technical parameters/rated power: 40 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.011 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 40 W

Technical parameters/threshold voltage: 1.8 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 43A

Technical parameters/rise time: 28 ns

Technical parameters/Input capacitance (Ciss): 780pF @15V(Vds)

Technical parameters/rated power (Max): 40 W

Technical parameters/descent time: 3.5 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 40W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 7.49 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRLR7807ZPBF IRLR7807ZPBF Infineon 类似代替 TO-252-3
INFINEON IRLR7807ZPBF 晶体管, MOSFET, N沟道, 40 A, 30 V, 13.8 mohm, 10 V, 1.8 V
PDF
IRLR7807ZTRLPBF IRLR7807ZTRLPBF International Rectifier 类似代替 DPAK
DPAK N-CH 30V 43A
PDF
IRLR7807ZTRRPBF IRLR7807ZTRRPBF Infineon 类似代替 TO-252-3
DPAK N-CH 30V 43A
PDF
STD40NF03LT4 STD40NF03LT4 ST Microelectronics 功能相似 TO-252-3
STMICROELECTRONICS STD40NF03LT4 晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
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