Technical parameters/rated voltage (DC): 8.00 V
Technical parameters/rated current: 30.0 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 12.4dB ~ 17.5dB
Technical parameters/maximum allowable collector current: 0.03A
Technical parameters/minimum current amplification factor (hFE): 40 @10mA, 3V
Technical parameters/rated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: SOIC-14
External dimensions/packaging: SOIC-14
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HFA3102BZ96
|
Renesas Electronics | 完全替代 | SOIC-14 |
双长尾对晶体管阵列 Dual Long-Tailed Pair Transistor Array
|
||
HFA3102BZ96
|
Intersil | 完全替代 | SOIC-14 |
双长尾对晶体管阵列 Dual Long-Tailed Pair Transistor Array
|
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