Technical parameters/breakdown voltage (collector emitter): | 12 V |
|
Technical parameters/gain: | 12.4dB ~ 17.5dB |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @10mA, 3V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 14 |
|
Encapsulation parameters/Encapsulation: | SOIC-14 |
|
Dimensions/Packaging: | SOIC-14 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HFA3102BZ
|
Intersil | 完全替代 | SOIC-14 |
双长尾对晶体管阵列 Dual Long-Tailed Pair Transistor Array
|
||
HFA3102BZ
|
Renesas Electronics | 完全替代 | SOIC-14 |
双长尾对晶体管阵列 Dual Long-Tailed Pair Transistor Array
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review