Technical parameters/number of pins: 2
Technical parameters/dissipated power: 1 W
Technical parameters/voltage regulation value: 6.8 V
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/Encapsulation: DO-204AL
External dimensions/packaging: DO-204AL
Other/Product Lifecycle: Active
Other/Manufacturing Applications: industry
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5235B
|
Central Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
Diodes | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
先科ST | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5235B
|
Multicomp | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
New Jersey Semiconductor | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
BZX85C6V8
|
ON Semiconductor | 完全替代 | DO-41 |
1W，BZX85C 系列，Fairchild Semiconductor ### 齐纳二极管，Fairchild Semiconductor
|
||
|
BZX85C6V8
|
Electronics Industry | 完全替代 |
1W，BZX85C 系列，Fairchild Semiconductor ### 齐纳二极管，Fairchild Semiconductor
|
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