Technical parameters/number of pins: 2
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 6.8 V
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Each
Other/Manufacturing Applications: Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5235B
|
Central Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
Diodes | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
先科ST | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5235B
|
Multicomp | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
New Jersey Semiconductor | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
BZX79-C6V8,143
|
NXP | 完全替代 | DO-204AH |
ALF 6.8V 0.5W(1/2W)
|
||
|
BZX79C6V8
|
EIC | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79C6V8 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
BZX79C6V8
|
Taiwan Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX79C6V8 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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