Technical parameters/test current: 2 mA
Technical parameters/voltage regulation value: 51 V
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/length: 4.25 mm
External dimensions/width: 1.85 mm
External dimensions/height: 1.85 mm
External dimensions/packaging: DO-35
Physical parameters/temperature coefficient: 46.9 mV/℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: PB free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX79-C51
|
NXP | 类似代替 | DO-35 |
齐纳二极管 500mW,BZX79 系列,Nexperia ### 齐纳二极管,Nexperia
|
||
BZX79-C51
|
Nexperia | 类似代替 | DO-35 |
齐纳二极管 500mW,BZX79 系列,Nexperia ### 齐纳二极管,Nexperia
|
||
BZX79-C51
|
Philips | 类似代替 |
齐纳二极管 500mW,BZX79 系列,Nexperia ### 齐纳二极管,Nexperia
|
|||
BZX79-C51
|
General Semiconductor | 类似代替 |
齐纳二极管 500mW,BZX79 系列,Nexperia ### 齐纳二极管,Nexperia
|
|||
|
|
Nexperia | 完全替代 | DO-35-2 |
ALF 51V 0.5W(1/2W)
|
||
PBHV8115T,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP PBHV8115T,215 单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
|
||
PBHV8115T,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PBHV8115T,215 单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
|
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