Technical parameters/number of pins: 2
Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 4.7 V
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: Quadro-Melf-2
External dimensions/length: 3.7 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1.8 mm
External dimensions/packaging: Quadro-Melf-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZT52-B4V7
|
Panjit | 功能相似 | SOD-123 |
Zener Diode, 4.7V V(Z), 1.91%, 0.41W, Silicon, Unidirectional, PLASTIC PACKAGE-2
|
||
BZT55C4V7
|
Multicomp | 类似代替 | SOD-80 |
MULTICOMP BZT55C4V7 单管二极管 齐纳, BZT55C系列, 4.7 V, 500 mW, MiniMELF, 2 引脚, 200 °C
|
||
BZT55C4V7
|
Taiwan Semiconductor | 类似代替 | Quadro-Melf-2 |
MULTICOMP BZT55C4V7 单管二极管 齐纳, BZT55C系列, 4.7 V, 500 mW, MiniMELF, 2 引脚, 200 °C
|
||
BZT55C4V7-GS08
|
VISHAY | 功能相似 | SOD-80 |
VISHAY BZT55C4V7-GS08 单管二极管 齐纳, AEC-Q101, 4.7 V, 500 mW, MiniMELF, 5 %, 2 引脚, 175 °C
|
||
BZV55C4V7
|
Vishay Semiconductor | 完全替代 | MELF |
单管二极管 齐纳, 4.7 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
|
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