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Model BUV27
Description NPNNPN Silicon Power Transistor
Product QR code
Brand: ON Semiconductor
Packaging TO-220-3
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3670) Minimum order quantity(1)
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Technical parameters/polarity: NPN

Technical parameters/dissipated power: 70 W

Technical parameters/breakdown voltage (collector emitter): 120 V

Technical parameters/maximum allowable collector current: 12A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.28 mm

External dimensions/width: 4.82 mm

External dimensions/height: 9.28 mm

External dimensions/packaging: TO-220-3

Other/Product Lifecycle: Unknown

Other/Minimum Packaging: 50

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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BUV27 BUV27 ON Semiconductor 功能相似 TO-220-3
Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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BUV27G BUV27G ON Semiconductor 功能相似 TO-220-3
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