Technical parameters/rated voltage (DC): 120 V
Technical parameters/rated current: 12.0 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 85.0 W
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/rated power (Max): 85 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 85000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUV27
|
TT Electronics Resistors | 功能相似 |
Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
|
|||
BUV27
|
Comset Semiconductors | 功能相似 |
Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
|
|||
BUV27
|
ST Microelectronics | 功能相似 | TO-220-3 |
Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
|
||
BUV27
|
ON Semiconductor | 功能相似 | TO-220-3 |
Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
|
||
BUV27G
|
ON Semiconductor | 功能相似 | TO-220-3 |
NPN硅功率晶体管 NPN Silicon Power Transistor
|
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