Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 4.80 A
Technical parameters/drain source resistance: 56.0 mΩ
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 5.10 A
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 620pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 27 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUFA76413DK8
|
Fairchild | 功能相似 | SOIC |
N-Channel Logic Level UltraFET R Power MOSFET 60V, 4.8A, 56mOhm
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STS4DNF60L
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ST Microelectronics | 功能相似 | SOIC-8 |
STMICROELECTRONICS STS4DNF60L 双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
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