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Model HUFA76409D3ST
Description UltraFET® MOSFET，Fairchild Semiconductor UItraFET® Trench MOSFET Combining the characteristics of achieving benchmark efficiency in power conversion applications. This device can withstand high energy in avalanche mode, and the diode exhibits very short reverse recovery time and accumulated charge. Optimized for high frequency efficiency, minimum RDS (on), low ESR, low total gate charge, and Miller gate charge. Applications: High frequency DC-DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.55  yuan 2.55yuan
5+:
$ 3.4452
25+:
$ 3.1900
50+:
$ 3.0114
100+:
$ 2.9348
500+:
$ 2.8838
2500+:
$ 2.8200
5000+:
$ 2.7944
10000+:
$ 2.7562
Quantity
5+
25+
50+
100+
500+
Price
$3.4452
$3.1900
$3.0114
$2.9348
$2.8838
Price $ 3.4452 $ 3.1900 $ 3.0114 $ 2.9348 $ 2.8838
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1088) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 17.0 A

Technical parameters/drain source resistance: 52.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 49 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±16.0 V

Technical parameters/Continuous drain current (Ids): 17.0 A

Technical parameters/rise time: 34 ns

Technical parameters/Input capacitance (Ciss): 485pF @25V(Vds)

Technical parameters/rated power (Max): 49 W

Technical parameters/descent time: 50 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 49W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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