Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.1 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 40A
Technical parameters/rise time: 3.4 ns
Technical parameters/Input capacitance (Ciss): 2800pF @20V(Vds)
Technical parameters/descent time: 4.2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.1W (Ta), 69W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PG-TSDSON-8
External dimensions/length: 3.4 mm
External dimensions/width: 3.4 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: PG-TSDSON-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Synchronous rectification, Or-ing switches, Isolated DC-DC converters
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSZ042N04NS G
|
Infineon | 类似代替 | PG-TSDSON-8 |
IInfineon OptiMOS™3 功率 MOSFET，高达 40V OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。 快速切换 MOSFET，用于 SMPS 优化技术，用于直流/直流转换器 符合目标应用的 JEDEC1 规格 N 通道，逻辑电平 极佳的栅极电荷 x R DS(on) 产品 (FOM) 极低导通电阻 R DS(on) 无铅电镀 ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
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