Technical parameters/drain source resistance: 3.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.1 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/rise time: 3.4 ns
Technical parameters/Input capacitance (Ciss): 3700pF @20V(Vds)
Technical parameters/rated power (Max): 69 W
Technical parameters/descent time: 4.2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.1W (Ta), 69W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PG-TSDSON-8
External dimensions/length: 3.4 mm
External dimensions/width: 3.4 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: PG-TSDSON-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSZ042N04NSGATMA1
|
Infineon | 类似代替 | PG-TSDSON-8 |
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ042N04NSGATMA1, 40 A, Vds=40 V, 8引脚 TSDSON封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review