Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 17.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.80 W
Technical parameters/input capacitance: 2.32 nF
Technical parameters/gate charge: 177 nC
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP135
|
Infineon | 完全替代 | SOT-223 |
Infineon SIPMOS® N 通道 MOSFET ### MOSFET 晶体管,Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
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