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Model BSP135
Description Infineon SIPMOS® N 通道 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
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Brand: Infineon
Packaging SOT-223
Delivery time
Packaging method
Standard packaging quantity 1
8.2  yuan 8.2yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9610) Minimum order quantity(1)
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Technical parameters/polarity:

N-Channel

 

Technical parameters/rise time:

5.6 ns

 

Technical parameters/Input capacitance (Ciss):

98pF @25V(Vds)

 

Technical parameters/descent time:

5.6 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1.8 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-223

 

Dimensions/Length:

6.5 mm

 

Dimensions/Width:

3.5 mm

 

Dimensions/Height:

1.6 mm

 

Dimensions/Packaging:

SOT-223

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Manufacturing Applications:

Onboard charger, Automotive

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSP125 BSP125 Siemens Semiconductor 完全替代
INFINEON BSP125 功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
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