Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/minimum current amplification factor (hFE): 50 @25mA, 20V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF820,215
|
Nexperia | 完全替代 | SOT-23-3 |
NXP BF820,215 单晶体管 双极, NPN, 300 V, 60 MHz, 250 mW, 50 mA, 50 hFE
|
||
BF820,215
|
NXP | 完全替代 | SOT-23-3 |
NXP BF820,215 单晶体管 双极, NPN, 300 V, 60 MHz, 250 mW, 50 mA, 50 hFE
|
||
BF820,215
|
Philips | 完全替代 | TO-236 |
NXP BF820,215 单晶体管 双极, NPN, 300 V, 60 MHz, 250 mW, 50 mA, 50 hFE
|
||
|
|
Nexperia | 类似代替 |
NPN型高压晶体管 NPN high-voltage transistor
|
|||
BF820W
|
Philips | 类似代替 | SOT-323 |
NPN型高压晶体管 NPN high-voltage transistor
|
||
BF820W,115
|
Nexperia | 功能相似 | SOT-323-3 |
SC-70 NPN 300V 0.05A
|
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