Technical parameters/frequency: 60 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/minimum current amplification factor (hFE): 50 @25mA, 20V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Communications & Networking, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 | SC-70 |
NXP Semiconductors ### 特点 支持自定义高密度电路设计 提供低泄漏和高电压类型 高切换速度 低电容 ### 二极管和整流器，NXP Semiconductors NXP 以不同封装和配置提供广泛的开关二极管。
|
||
BAW56W,115
|
Nexperia | 功能相似 | SOT-323-3 |
NXP Semiconductors ### 特点 支持自定义高密度电路设计 提供低泄漏和高电压类型 高切换速度 低电容 ### 二极管和整流器，NXP Semiconductors NXP 以不同封装和配置提供广泛的开关二极管。
|
||
|
|
Philips | 完全替代 |
TO-236AB NPN 300V 0.05A
|
|||
BF820,235
|
NXP | 完全替代 | SOT-23-3 |
TO-236AB NPN 300V 0.05A
|
||
BF820,235
|
Nexperia | 完全替代 | SOT-23-3 |
TO-236AB NPN 300V 0.05A
|
||
BF820W,115
|
Nexperia | 功能相似 | SOT-323-3 |
SC-70 NPN 300V 0.05A
|
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