Technical parameters/dissipated power: 250 mW
Technical parameters/minimum current amplification factor (hFE): 67
Technical parameters/DC current gain (hFE): 67
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/packaging: TO-236
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens AG | 功能相似 | SOT-23 |
SOT-23 - Power Transistor and Darlingtons
|
||
BF840
|
Philips | 功能相似 | TO-236 |
SOT-23 - Power Transistor and Darlingtons
|
||
BF840
|
Infineon | 功能相似 | SOT-23 |
SOT-23 - Power Transistor and Darlingtons
|
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