Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/minimum current amplification factor (hFE): 50 @25mA, 20V
Technical parameters/Maximum current amplification factor (hFE): 50 @25mA, 20V
Technical parameters/rated power (Max): 250 mW
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF821,215
|
NXP | 完全替代 | SOT-23-3 |
NXP BF821,215 单晶体管 双极, PNP, -300 V, 60 MHz, 250 mW, -50 mA, 50 hFE
|
||
MMBTA92-7-F
|
Diodes Zetex | 功能相似 | SOT-23 |
三极管
|
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