Technical parameters/frequency: 60 MHz
Technical parameters/number of pins: 3
Technical parameters/forward voltage: 1.00 V
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/minimum current amplification factor (hFE): 50 @25mA, 20V
Technical parameters/Maximum current amplification factor (hFE): 50 @25mA, 20V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF821,235
|
NXP | 完全替代 | SOT-23-3 |
TO-236AB PNP 300V 0.05A
|
||
BF821,235
|
Nexperia | 完全替代 | SOT-23-3 |
TO-236AB PNP 300V 0.05A
|
||
MMBTA92-7-F
|
Diodes Zetex | 功能相似 | SOT-23 |
三极管
|
||
MMBTA92LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBTA92LT1G 单晶体管 双极, 通用, PNP, -300 V, 50 MHz, 300 mW, -500 mA, 50 hFE
|
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