Technical parameters/polarity: NPN
Technical parameters/dissipated power: 36 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 40 @500mA, 1V
Technical parameters/rated power (Max): 36 W
Technical parameters/DC current gain (hFE): 140
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 36000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD436S
|
ON Semiconductor | 功能相似 | TO-126-3 |
TRANSISTOR PNP 32V 4A TO-126
|
||
BD436STU
|
ON Semiconductor | 类似代替 | TO-126-3 |
TRANSISTOR PNP 32V 4A TO-126
|
||
|
|
Fairchild | 功能相似 |
NPN功率晶体管 NPN power transistor
|
|||
|
|
CJ | 功能相似 | TO-126 |
NPN功率晶体管 NPN power transistor
|
||
BD441
|
Multicomp | 功能相似 | TO-126 |
NPN功率晶体管 NPN power transistor
|
||
BD441
|
CDIL | 功能相似 |
NPN功率晶体管 NPN power transistor
|
|||
BD441
|
ST Microelectronics | 功能相似 | TO-126-3 |
NPN功率晶体管 NPN power transistor
|
||
BD441G
|
ON Semiconductor | 功能相似 | TO-225-3 |
ON SEMICONDUCTOR BD441G Bipolar (BJT) Single Transistor, NPN, 80 V, 3 MHz, 36 W, 4 A, 15 hFE 新
|
||
TIP48G
|
ON Semiconductor | 功能相似 | TO-220-3 |
TIP 系列 300 V 1 A NPN 通孔 硅 功率晶体管 - TO-220AB
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review