Technical parameters/breakdown voltage (collector emitter): | 32 V |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @10mA, 5V |
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Technical parameters/rated power (Max): | 36 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 36000 mW |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-126-3 |
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Dimensions/Packaging: | TO-126-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bag |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD436STU
|
ON Semiconductor | 完全替代 | TO-126-3 |
TRANSISTOR PNP 32V 4A TO-126
|
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|
|
Fairchild | 类似代替 |
塑料中功率型硅NPN晶体管 Plastic Medium Power Silicon NPN Transistor
|
|||
|
|
CJ | 类似代替 | TO-126 |
塑料中功率型硅NPN晶体管 Plastic Medium Power Silicon NPN Transistor
|
||
BD441
|
Multicomp | 类似代替 | TO-126 |
塑料中功率型硅NPN晶体管 Plastic Medium Power Silicon NPN Transistor
|
||
BD441
|
CDIL | 类似代替 |
塑料中功率型硅NPN晶体管 Plastic Medium Power Silicon NPN Transistor
|
|||
BD441
|
ST Microelectronics | 类似代替 | TO-126-3 |
塑料中功率型硅NPN晶体管 Plastic Medium Power Silicon NPN Transistor
|
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