Technical parameters/rated current: 100 mA
Technical parameters/dissipated power: 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Technical parameters/rated voltage: 30 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-253-4
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: TO-253-4
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: -, current mirror
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCV62,215
|
NXP | 完全替代 | TO-253-4 |
NXP BCV62,215 双极晶体管阵列, 双PNP, -30 V, 250 mW, -100 mA, 100 hFE, SOT-143B
|
||
BCV62B,215
|
Nexperia | 类似代替 | TO-253-4 |
Nexperia BCV62B,215, 双 PNP 晶体管, 100 mA, Vce=30 V, HFE:100, 100 MHz, 4引脚 SOT-143B封装
|
||
BCV62B,215
|
NXP | 类似代替 | TO-253-4 |
Nexperia BCV62B,215, 双 PNP 晶体管, 100 mA, Vce=30 V, HFE:100, 100 MHz, 4引脚 SOT-143B封装
|
||
BCV62B,215
|
Philips | 类似代替 | SOT |
Nexperia BCV62B,215, 双 PNP 晶体管, 100 mA, Vce=30 V, HFE:100, 100 MHz, 4引脚 SOT-143B封装
|
||
BCV62C,215
|
NXP | 类似代替 | TO-253-4 |
Nexperia BCV62C,215, 双 PNP 晶体管, 100 mA, Vce=30 V, HFE:100, 100 MHz, 4引脚 SOT-143B封装
|
||
|
|
Philips | 类似代替 | SOT |
Nexperia BCV62C,215, 双 PNP 晶体管, 100 mA, Vce=30 V, HFE:100, 100 MHz, 4引脚 SOT-143B封装
|
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