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Model BCV62C,215

Description NXP BCV62C,215 Bipolar transistor array, dual PNP, -30 V, 250 mW, -100 mA, 420 hFE, SOT-143B

Brand: NXP

Packaging TO-253-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	100 MHz
Technical parameters/rated current:	100 mA
Technical parameters/number of pins:	4
Technical parameters/polarity:	PNP
Technical parameters/dissipated power:	250 mW
Technical parameters/breakdown voltage (collector emitter):	30 V
Technical parameters/Maximum allowable collector current:	0.1A
Technical parameters/DC current gain (hFE):	420
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	250 mW
Technical parameters/rated voltage:	30 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-253-4
Dimensions/Height:	1 mm
Dimensions/Packaging:	TO-253-4
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	current mirror
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
BCV62C	NXP	完全替代	SOT-143	NXP BCV62C 双极晶体管阵列, PNP, 30 V, 250 mW, -100 mA, 420 hFE, SOT-143	PDF
BCV62C,215	NXP	类似代替	TO-253-4	Nexperia BCV62C,215, 双 PNP 晶体管, 100 mA, Vce=30 V, HFE:100, 100 MHz, 4引脚 SOT-143B封装	PDF
BCV62C,215	Philips	类似代替	SOT	Nexperia BCV62C,215, 双 PNP 晶体管, 100 mA, Vce=30 V, HFE:100, 100 MHz, 4引脚 SOT-143B封装