Technical parameters/frequency: 250 MHz
Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/DC current gain (hFE): 520
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-253-4
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: TO-253-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, For current mirror applications, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCV62C
|
NXP | 功能相似 | SOT-143 |
NXP BCV62C 双极晶体管阵列, PNP, 30 V, 250 mW, -100 mA, 420 hFE, SOT-143
|
||
BCV62C,215
|
NXP | 功能相似 | TO-253-4 |
Nexperia BCV62C,215, 双 PNP 晶体管, 100 mA, Vce=30 V, HFE:100, 100 MHz, 4引脚 SOT-143B封装
|
||
|
|
Philips | 功能相似 | SOT |
Nexperia BCV62C,215, 双 PNP 晶体管, 100 mA, Vce=30 V, HFE:100, 100 MHz, 4引脚 SOT-143B封装
|
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