Technical parameters/frequency: 140 MHz
Technical parameters/rated power: 1.35 W
Technical parameters/number of pins: 4
Technical parameters/dissipated power: 1.35 W
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/minimum current amplification factor (hFE): 160 @500mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 160 @500mA, 1V
Technical parameters/rated power (Max): 650 mW
Technical parameters/DC current gain (hFE): 160
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive, industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP69,135
|
Nexperia | 类似代替 | TO-261-4 |
BCP69 系列 20 V 2 A 表面贴装 PNP 中等功率 晶体管 - SOT-223
|
||
BCP69-25,135
|
Nexperia | 类似代替 | TO-261-4 |
SC-73 PNP 20V 2A
|
||
BCP69T1G
|
ON Semiconductor | 功能相似 | SOT-223 |
ON SEMICONDUCTOR BCP69T1G 单晶体管 双极, 通用, PNP, -20 V, 60 MHz, 1.5 W, -1 A, 375 hFE
|
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