Technical parameters/rated power: | 1.35 W |
|
Technical parameters/breakdown voltage (collector emitter): | 20 V |
|
Technical parameters/minimum current amplification factor (hFE): | 85 @500mA, 1V |
|
Technical parameters/rated power (Max): | 1.4 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1350 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Packaging: | TO-261-4 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP69,115
|
Nexperia | 类似代替 | TO-261-4 |
Nexperia BCP69,115 , PNP 晶体管, 1 A, Vce=20 V, HFE:50, 140 MHz, 4引脚 SOT-223 (SC-73)封装
|
||
BCP69,115
|
NXP | 类似代替 | TO-261-4 |
Nexperia BCP69,115 , PNP 晶体管, 1 A, Vce=20 V, HFE:50, 140 MHz, 4引脚 SOT-223 (SC-73)封装
|
||
BCP69T1G
|
ON Semiconductor | 功能相似 | SOT-223 |
ON SEMICONDUCTOR BCP69T1G 单晶体管 双极, 通用, PNP, -20 V, 60 MHz, 1.5 W, -1 A, 375 hFE
|
||
DCP69-13
|
Diodes | 功能相似 | TO-261-4 |
三极管(BJT) DCP69-13 SOT-223
|
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